Library Article

Opt-electrical properties of ITO Films Deposited on Plate Glass by High Intensity Pulsed Ion Beam Method

It is known that the productivity of depositing ITO films is low for the low deposition rate on the glass substrate by conventional methods. However ITO films had been successfully deposited on glass substrates at room temperature by the high-intensity, pulsed ion beams (HIPIB). Film with thickness of about 65 nm was obtained by one shoot.The highest transmittance of film was over 90% in visible range and the lowest sheet resistance of about 13.7 ohm/ was exibited by the film with 1000 nm thickness after heat treatment.

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The Authors

Prof. Chengyu Wang
Professor
Dalian Institute of Light Industry

Prof. Wang Chengyu is a director of Institute of Glass and Inorganic New Materials. He has made the creative work on the research of glass science and technology for 45 years. He has been a member of ...

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